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L149
4A LINEAR DRIVER
HIGH OUTPUT CURRENT (4A peak) HIGH CURRENT GAIN (10.000 typ.) OPERATION UP TO 20 V THERMAL PROTECTION SHORT CIRCUIT PROTECTION OPERATION WITHIN SOA HIGH SLEW-RATE (30 V/s) DESCRIPTION The L149 is a general purpose power booster in Pentawatt (R) package consisting of a quasi-complentary darlington output stage with the associated biasing system an inhibit facility. The device is particularly suited for use with an operational amplifier inside a closed loop configuration to increase output current. ABSOLUTE MAXIMUM RATINGS
Symbol Vs Vi V5 - V4 V4 - V3 Io I VINH Ptot Supply Voltage Input Voltage Upper Power Transistor VCE Lower Power Transistor VCE DC Output Current Peak Output Current (internally limited) Input Inhibit Voltage Total Power Dissipation at Tcase = 75 C) 40 40 3 4 - Vs + 5 - Vs - 1.5 25 Parameter Value 20 Unit V Vs V V A A V V W
Pentawatt(R)
ORDER CODE : L149V
TEST CIRCUIT
March 1993
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CONNECTION DIAGRAM (top view)
SCHEMATIC DIAGRAM
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THERMAL DATA
Symbol Rth-j-case Thermal resistance junction-case Parameter max Value 3 Unit C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 C, Vs = 16V)
Symbol Vs Id Iin hFE GV VCEsat Vos VINH Parameter Supply Voltage Quiescent Drain Current Input current DC current drain Voltage gain Saturation voltage (for each transistor) Input offset voltage Inhibit input voltage (pins 1-3) Vs = 16 V Vs = 16 V Vs = 16 V Vs = 16 V Io = 3A Vs = 16 V ON condition OFF condition RINH SR B Inhibit input resistance Slew rate Power bandwidth Vo = 10V, d = 1%, RL = 8 1.8 2.0 30 200 Vi = 0V Io = 3A Io = 1.5A 6000 30 200 10000 1 3.5 0.3 0.3 400 Test conditions Min. Typ. Max. 20 Unit V mA A V V V K V/s KHZ
APPLICATION INFORMATION Figure 1. High slew-rate power operational amplifier (SR = 13V/s)
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Figure 2. Maximum saturation voltage vs. output current. Figure 3. Current limiting characteristics.
Fi gure 4: Suppl y voltage rejection vs. frequency.
Figure 5: Distorsion vs. output power (f = 1KHz).
Figure 6. Distorsion vs. output power (f = 1KHz).
Figure 7. Output power vs. supply voltage.
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PENTAWATT PACKAGE MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia 3.65 2.6 15.1 6 4.5 4 3.85 0.144 10.05 17.85 15.75 21.4 22.5 3 15.8 6.6 0.102 0.594 0.236 0.177 0.157 0.152 2.4 1.2 0.35 0.8 1 3.4 6.8 10.4 10.4 0.396 0.703 0.620 0.843 0.886 0.118 0.622 0.260 mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409
L L1
E
A
C
D1
L2 L3
L5
D
Dia.
F1 F
L6
H2
L7
G
G1
H3
M
M1
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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